Lateral superradiance suppressing diode laser bar

Abstract

A diode laser bar producing a linear array of laser beams without lateral superradiance. The laser bar has a double-heterostructure or quantum well structure. Etched channels in the substrate create lateral corrugations in the subsequently deposited layers including the active region. The corrugations alternate between offset groove and plateau regions in the lateral direction but are straight in the longitudinal light propagating direction. Any laterally propagating light is interrupted at steps, between groove and plateau regions, by deflection, scattering or transmission out of the active region. Interruption may also be achieved with a plurality of parallel etched grooves extending in the longitudinal direction. The grooves which cut through the active region present a semiconductor-air interface for reflection and/or scattering of laterally propagating light out of the active region. Proton bombarded regions may be provided above the step regions in the top layers to channel current and prevent optical burnout of the step regions. A small percentage of laser light may be allowed to laterally propagate into adjacent active regions to promote phase locking across the laser bar.