The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1989
Filed:
Mar. 29, 1985
Peter A Psaras, Ossining, NY (US);
King-Ning Tu, Chappaqua, NY (US);
Richard D Thompson, Lake Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method are described for forming different metal silicide phases, using the same metallurgy and the same processing steps. A layer of metal is deposited on a silicon substrate and is heated to thermally convert the metal-silicon combination to a metal silicide. The metal silicide phase which forms is strongly dependent upon the dopant and doping level in the silicon substrate, for various combinations of metal and dopant. Thus, different metal silicides can be formed on different regions of the substrate in accordance with the dopant and doping levels in those different regions, even though the process steps and metallurgy are the same. These different metal silicides can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers.