The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1989
Filed:
Mar. 02, 1987
Masao Taguchi, Sagamihara, JP;
Fujitus Limited, Kanagawa, JP;
Abstract
A dynamic random access memory having a trench capacitor includes: a semiconductor substrate; a trench formed in a semiconductor substrate; an insulating layer formed on an inner surface of the trench and having a bottom opening; a first conductive layer formed at the bottom opening position and on the insulating layer and the first conductive layer is ohmically connected to the semiconductor substrate at the bottom opening. The device includes further a dielectric layer formed on the first conductive layer; a second conductive layer formed on the dielectric layer so as to fill the trench, the first conductive layer, the dielectric layer, and the second conductive layer constituting a charge storage capacitor; and a MIS transistor formed in the semiconductor substrate, wherein the second conductive layer is ohmically connected to a source or drain region of the MIS transistor.