The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1989
Filed:
Feb. 22, 1988
Shigeyuki Kobori, Hitachi, JP;
Kazuji Yamada, Hitachi, JP;
Ryoichi Kobayashi, Toukai, JP;
Atsushi Miyazaki, Katsuta, JP;
Seikou Suzuki, Hitachioota, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.