The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1989
Filed:
Feb. 04, 1987
David Ankri, 91370 Verrieres, FR;
Jean-Francois Palmier, 92260 Fontenay-aux-Roses, FR;
Other;
Abstract
This structure comprises a heterostructure formed from first, second and third stacked semiconductor layer, the first and third layers being of N-GaAlAs having a forbidden band width at least equal to that of the materials forming the second layer constituting the active layer of the structure, said second layer being formed from a super-lattice having thin layers of P-GaAs and thin layers of P-GaAlAs in alternating form and oriented parallel to the first and third layers, a N region extending at least from one face to the other of the third layer defining with the latter the PN junction of the laser and means for supplying the laser and transistor with current.