The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1989
Filed:
May. 01, 1987
Yves Carpentier, Savigny sur Orge, FR;
Michel Royer, Paris, FR;
Societe Anonyme de Telecommunications, Paris, FR;
Abstract
An HgCdTe avalanche photodiode for use at ambient temperature comprises an Hg.sub.1-x Cd.sub.x Te crystal substrate in which x is chosen between substantially 0.35 and substantially 0.5, a PN junction is formed in the substrate with low concentrations in the vicinity of the junction, by impurity penetration from a polished and chemically etched surface and the P zone is illuminated. A guard band is provided around the PN junction. The dark current of the photodiode is less than 0.1 .ANG./cm2 at ambient temperature and the excess noise factor is less than 0.4. The photodiode of the invention is used for detecting signals transmitted along fluorated glass optical fibers, for example.