The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1989
Filed:
May. 19, 1987
Bantval J Baliga, Schenectady, NY (US);
Deva N Pattanayak, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
The present invention relates generally to monolithically integrated gate semiconductor devices and more particularly, to improved semiconductor structures in which the parasitic four layer structure has been modified to avoid the possibility that non-preferred turn-on can occur. The length of the emitter region is reduced to thereby reduce the length of the base emitter junction and the magnitude of the IR voltage drop than can occur along that junction. Further, high density shorts are provided along that junction to prevent the parasitic four layer structure from functioning in a non-preferred latched or regenerative conducting mode. In an alternate embodiment, the parasitic four layer structure has been eliminated. Accordingly, insulated gate control of the device is preserved.