The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1989
Filed:
Feb. 26, 1986
Jens Gobrecht, Gebenstorf, CH;
Peter Roggwiller, Riedt-Neerach, CH;
Roland Sittig, Umiken, CH;
Jan Voboril, Nussbaumen, CH;
BBC Brown, Boveri & Company, Limited, Baden, CH;
Abstract
A process for manufacturing a power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first second metallized contact planes, which impress a step-like structure onto a first surface of the component. The steps have a height of between 10 and 20 .mu.m and a width of between 20 and 300 .mu.m. The ratio between the surface area of the first contact plane and the surface area of the second contact plane is between 1 and 4. The first layer is heavily doped and has a maximum thickness of 8 .mu.m, and the second layer is lightly doped and has a maximum thickness of 40 .mu.m. According to the process for manufacturing the component, the surface structure according to the invention is produced essentially by a reactive ion-etching process with a single aluminum mask.