The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1989
Filed:
Dec. 19, 1986
Katunobu Awane, Ikoma, JP;
Masayoshi Koba, Nara, JP;
Toshiaki Miyajima, Ikoma, JP;
Masashi Maekawa, Nara, JP;
Agency of Industrial Science and Technology, Tokyo, JP;
Abstract
Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '