The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1989
Filed:
May. 08, 1984
Applicant:
Inventor:
Salvatore Musemeci, Giarre, IT;
Assignee:
SGS-ATES Componenti Elettronici S.p.A., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 86 ;
Abstract
The ballast resistance of the base of a bipolar power transistor is realized by a localized pinching of the base region by means of a special diffused region. A surface metallization brings the diffused region into contact with the adjacent base region so that a diode is formed in parallel with the base ballast resistance. The diode becomes conductive when the voltage drop across the resistance which is generated by the base current of the transistor exceeds the conduction threshold of the junction, thereby bypassing the ballast resistance.