The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1989
Filed:
Mar. 14, 1986
Masahiko Nakamae, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A process for making a semiconductor device including a semiconductor layer heavily doped to a predetermined dopant concentration and a multilayer contact system in contact with a surface portion of the heavily doped semiconductor layer, the multilayer contact system comprising a metal silicide layer of the silicide of a refractory metal, the metal silicide layer directly contacting the surface portion of the heavily doped semiconductor layer and being lower in dopant concentration than the predetermined dopant concentration of the semiconductor layer, a barrier layer of at least one metal on the metal silicide layer, and an electrode layer including a highly conductive metal on the barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile