The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1989
Filed:
Aug. 21, 1986
Hiroko Nagasaka, Yokohama, JP;
Gen-ichi Hatakoshi, Yokohama, JP;
Naohiro Shimada, Yokahama, JP;
Motoyuki Yamamoto, Kawasaki, JP;
Masaki Okajima, Kunitachi, JP;
Yoshio Iizuka, Yokohama, JP;
Hatsumi Kawata, Tokyo, JP;
Hideaki Kinoshita, Yokohama, JP;
Nobuyuki Matsuura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor laser diode includes two semiconductive cladding layers of different conductivity types, which are stacked on a substrate. An active layer of an undoped semiconductor film is sandwiched between the cladding layers. A channel groove is formed in a current blocking layer and the underlying cladding layer, to be deep enough to cause the current blocking layer to be divided into two parts. A waveguide layer covers the channel groove and the current-blocking layer, to provide a slab-coupled waveguide structure for transverse mode oscillation. The second cladding layer, the current-blocking layer, and the waveguide layer are composed of gallium arsenide containing aluminum.