The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1989
Filed:
Jul. 10, 1987
Applicant:
Inventors:
Takao Matsuyama, Hirakata, JP;
Hisaki Tarui, Hirakata, JP;
Shinya Tsuda, Yawata, JP;
Shoichi Nakano, Hirakata, JP;
Yukinori Kuwano, Katano, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 234 ; 357 237 ; 357-2 ;
Abstract
A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.