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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4799087 B1

PDFFull Text
Date of Patent:
Jan. 17, 1989

Filed:

Jul. 10, 1987

Field effect transistor

Applicant:
Inventors:

Takao Matsuyama, Hirakata, JP;

Hisaki Tarui, Hirakata, JP;

Shinya Tsuda, Yawata, JP;

Shoichi Nakano, Hirakata, JP;

Yukinori Kuwano, Katano, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorneys:

Fasse; W. G.

Kane, Jr.; D. H.

Primary Examiner:

Martin H Edlow

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 234 ; 357 237 ; 357-2 ;
Abstract

A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.

Find Patent Forward Citations

Matsuyama, Takao. (1989). Field effect transistor (U.S. Patent No. 4799087). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4799087

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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