The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1989
Filed:
May. 14, 1986
Seiji Kojima, Tokyo, JP;
Masakiyo Ikeda, Yokohama, JP;
Hiroshi Kikuchi, Tokyo, JP;
Yuzo Kashiwayanagi, Yokosuka, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A vapor phase deposition method for the GaAs thin film is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are decomposed thermally and GaAs crystals are allowed to deposit onto the GaAs substrate, for the deposition of n-type conductive GaAs crystals, arsine gas and organic gallium gas are supplied at such a supplying ratio (V/III) as p-type conductive GaAs crystals are deposited unless an impurity is added intentionally and gas of the compounds of VI group elements is added to these gases to make n-type conductive GaAs crystals having a carrier density of not less than 1.times.10.sup.16 cm.sup.-3.