The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1989
Filed:
Sep. 14, 1987
Applicant:
Inventor:
Peter J Schubert, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 56 ; 357 59 ; 357 237 ; 357 239 ;
Abstract
An MOS transistor having relatively low parasitic capacitances is achieved by forming a dielectrically isolated mesa on a monocrystalline substrate. Such mesa includes a polycrystalline silicon region that serves as a gate region and an oxide layer that serves as a gate oxide. Subsequently, such mesa is made to sit on a platform, arising from the silicon substrate and surrounded by a sea of silicon dioxide originally at the level of the bottom of the mesa. The level of this sea is lowered to expose opposed sides of the platform to which is grown separate regions of lateral epitaxial silicon that serve as the source and drain of the transistor.