The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 1989

Filed:

Sep. 22, 1987
Applicant:
Inventors:

Gunter Hollrigl, Schaffhausen, CH;

Pedro Rodrigues, Schaffhausen, CH;

Assignee:

Swiss Aluminum Ltd., Chippis, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22F / ;
U.S. Cl.
CPC ...
148-2 ; 148-3 ; 148 / ; 148159 ; 420902 ;
Abstract

In a process for manufacturing a fine-grained recrystallized sheet of heat-treatable i.e. age-hardenable aluminum alloy containing an addition of at least one of the elements Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W amounting in total to 0.08-1.50%, the alloy is brought into a condition A in which the alloying elements that lead to age-hardening and the above mentioned additive elements are, at least for the greater part, in solid solution, following which in step B the incoherent hardening phases are precipitated out in a temperature range between the solvus T.sub.gps and the solvus T.sub.s, and in a subsequent step C the aluminides of the above mentioned elements are precipitated as a very dense uniform dispersion by heating in a temperature range between 300.degree. C. and T.sub.s -30.degree. C., whereby any deformation by rolling may take place between condition A and step C at temperatures not higher than T.sub.s -30.degree. C., and in which process the temperature of the sheet below a thickness or 2.5 xd does not exceed 200.degree. C., and the sheet at thickness d is heated to a recrystallization treatment D such that the heating rate is at least 20.degree. C./s until above the recrystallization threshold.


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