The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1989
Filed:
May. 22, 1987
Richard K DeFreez, Hillsboro, OR (US);
Richard A Elliott, Beaverton, OR (US);
Joseph Puretz, Beaverton, OR (US);
Oregon Graduate Center, Beaverton, OR (US);
Abstract
A coherent, two-dimensional, phase-locked, surface emitting semiconductor laser array in a monolithic wafer is disclosed. Active regions of diode laser-striped semiconductor material are focused ion beam (FIB) micromachined to form transversely disposed channels of symmetric, opposed, generally parabolic, mirrored surfaces. Multiple diode laser pairs, emitting laser energy in a generally horizontal plane, are longitudinally injection-coupled (phase-locked) by semitransmissive, opposed regions that are micromachined into the otherwise reflective parabolic surfaces of each channel. Inherently, the striped material permits evanescent coupling, in an axis generally perpendicular to the longitudinal, injection-coupled axis. Thus, coupling is achieved in two dimensions across the extent of the array. High-power, coherent, laser energy is reflected thereby generally normally away from the surface of the monolithic structure. In a modification to the preferred embodiment, discrete electrodes on the top surface of the active region segments enable laser beam modulation or wavelength tuning of the coherent, surface emitting laser energy.