The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 1989

Filed:

Aug. 11, 1987
Applicant:
Inventors:

Yukio Takeda, Hitachi, JP;

Satoru Ogihara, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C04B / ; F27B / ;
U.S. Cl.
CPC ...
357 67 ; 357 80 ; 357 81 ; 357 74 ; 501 88 ; 501 89 ; 501 90 ; 264 65 ;
Abstract

The present invention provides a highly thermal conductive, electrical insulating ceramic body having at least 90% of theoretical density and comprising 20 to 40% by weight of silicon carbide, the balance being substantially aluminum nitride, the silicon carbide containing not more than 0.1 by weight of sum total of boron, aluminum and nitrogen and not more than 0.2% by weight of sum total of iron, titanium, vanadium, chromium and nickel, and the aluminum nitride containing not more than 1% by weight of oxygen and not more than 0.5% by weight of sum total of silicon, iron and magnesium, the sintered body having a thermal conductivity at 20.degree. C. of at least 250 W/m..degree.K, an electrical resistivity at 20.degree. C. of at least 10.sup.10 .OMEGA.. cm, a dielectric strength at 20.degree. C. of at least 20 kV/cm, a dielectric constant at 1 MHz of not more than 10, a bending strength at 20.degree. C. of at least 400 MPa and a fracture toughness at 20.degree. C. of at least 5MN/m.sup.3/2. The present sintered body can be used as a substrate for a semi-conductor device, and a semi-conductor device using the present sintered body has good heat radiation. The present sintered body can be used as a substrate for a semi-conductor device, and a semi-conductor device using the present sintered body has a good heat radiation characteristic.


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