The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1989
Filed:
Jan. 15, 1987
Robert D Black, Clifton Park, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A lateral charge control semiconductor device is disclosed wherein a plurality of gate filled trenches are disposed in side-by-side relation within a partially processed semiconductor wafer to define finger portions of a drain region therebetween. A field plate is disposed on the upper surface of the finger portions and a portion of the partially processed wafer is situated beneath the finger portions. Charge control can thus be provided to all surface of the finger portion of the lateral device to maximize the amount of charge control which can be applied to the device. More particularly, the carrier concentration within the finger portion can be increased to reduce the one-resistance of the device during forward conduction, while in a reverse blocking operation, lateral charge control can be applied to couple to the electric field originating with the ionized impurities situated in the drift/drain region to increase the breakdown voltage of the device.