The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1988
Filed:
Mar. 24, 1988
Hitachi, Ltd., Tokyo, JP;
Abstract
An opto-electronic device has an atomic layer superlattice semiconductor comprising different semiconductor materials periodically piled up, each material having an atomic layer thickness. The superlattice semiconductor has a bandgap different from an alloy semiconductor having equivalently the same composition as the former. In a semiconductor laser, as clad layers, the atomic layer superlattice semiconductor having equivalently the same composition as a Zn.sub.0.42 Cd.sub.0.58 S alloy semiconductor and a larger bandgap than the later is used, and a ZnSe.sub.0.94 S.sub.0.06 alloy semiconductor as an active layer is located between the cladding layers. The double-hetero structure semiconductor laser thus provided can perform the lasing at 470 nm at room temperature.