The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1988
Filed:
Jan. 11, 1988
Applicant:
Inventor:
Yukimasa Uchida, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365205 ; 365149 ; 365203 ; 365210 ; 365226 ;
Abstract
A dynamic read-write random access memory (DRAM) including a memory cell, a word line and a bit line. The memory cell has a capacitor and a MOS transistor which has a gate connected to the word line, a drain terminal connected to the capacitor and a source terminal connected to the bit line. The DRAM further includes a supply circuit for applying to the bit line a voltage level having a value between the voltage level of the word line and the voltage level of the drain terminal of the MOS transistor when the memory cell is not selected, so as to prevent leakage current from flowing through the MOS transistor.