The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1988
Filed:
Jul. 29, 1987
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 67 ; 357 55 ; 357 49 ;
Abstract
A semiconductor device has a structure in which two semiconductor substrates are coupled to each other through a semiconductor oxide film and a metal silicide film, and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate on the metal silicide film side, whereby a metal silicide layer having a high melting point is provided beneath one region of the bi-polar transistor for example, an n.sup.+ buried collector layer and in ohmic contact with the n.sup.+ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer.