The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1988
Filed:
Apr. 10, 1986
Applicant:
Inventors:
Shing-Gong Liu, Princeton, NJ (US);
John P Paczkowski, Kingston, NJ (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 65 ; 357 16 ; 357 61 ; 357 63 ; 357 68 ; 357 71 ;
Abstract
An Ohmic contact to a semiconductor body includes a thin semiconductor layer disposed between the body and a conductive layer. The thin layer is not alloyed to the conductive layer and not lattice matched to the body. The layer can have a thickness of less than about 100 nm and a lattice mismatch of at least 0.5 percent. Since the thin layer is not alloyed, a Schottky contact can be formed at the same time as the ohmic contact.
Liu, Shing-Gong. (1988). Ohmic contact and method for making same (U.S. Patent No. 4794444). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4794444
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile