The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1988
Filed:
Oct. 22, 1987
Applicant:
Inventor:
Nicholas E Miller, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427124 ; 427 79 ; 4271261 ; 4271263 ; 427253 ; 4272551 ; 427265 ; 427294 ; 427404 ; 4274192 ; 4274197 ;
Abstract
Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240.degree.-400.degree. C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.