The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1988
Filed:
Jun. 17, 1987
Shigeo Sugou, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An improved semiconductor laser comprises the first and second cladding portions respectively formed on a semi-insulating substrate, an active region sandwiched between the first and second cladding portions, and the first and second electrodes respectively provided on the first and second cladding portions. The first cladding portion includes a semiconductor layer and semi-insulating semiconductor layers provided on the top and back sides of the semiconductor layer so that carries are injected into an active region which is in contact with the side wall of the semiconductor layer, while current leakage is prevented from being produced because the carrier are not injected into other portion than the active region. An improved process of the fabrication of a semiconductor laser comprises forming the first cladding portion to have a vertical side wall from which a side wall of a semiconductor layer is exposed so that an active region is easily formed to be in contact with the side wall of the semiconductor layer.