The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1988
Filed:
Feb. 11, 1987
Werner Schairer, Weinsberg, DE;
Jochen Gerner, Wiesloch, DE;
Telefunken Electronic GmbH, Heilbronn, DE;
Abstract
The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein the layer sequence includes a laser-active zone arranged between layers of respectively opposite conductivity types, and an additional layer and having a cover layer disposed thereon, and both of the same conductivity type as the substrate, formed on the side of the layer sequence facing away from the substrate, and wherein the cover layer includes an oppositely doped semiconductor area which, in a stripe-shaped surface region extending perpendicularly to the exit surface of the laser radiation in the area of the axis of symmetry, and through a v-groove-shaped recess penetrates, the boundary plane between the cover layer and the adjacent additional layer and extends into the layer located thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow, strip-shaped area of the laser-active zone. Higher output power and greater long-term stability are attained by the v-groove-shaped recess being made shorter in its longitudinal dimensions than the resonator length and by the laser-active zone being simultaneously highly doped.