The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1988
Filed:
Dec. 18, 1986
Daniel Amingual, Grenoble, FR;
Pierre Felix, Grenoble, FR;
Commissariat A L'Energie Atomique, Paris, FR;
Abstract
Heterojunction HgCdTe detector has in order, a first type P Hg.sub.1-x.sbsb.1 Cd.sub.x.sbsb.i Te monocrystalline semiconductor layer, x.sub.1 being a number between 0 and 1, containing a first type P region, a second type P Hg.sub.1-x.sbsb.2 Cd.sub.x.sbsb.2 Te monocrystalline semiconductor layer, x.sub.2 being a number higher than x.sub.1 between 0 and 1, containing a second type N region which faces and is in contact with the first region, an electrical insulant located above the first semiconductor layer and an electric contact element located on the insulant for collecting the electric signal produced in said first region, said contact element having a part traversing the second region and partly penetrating the first region with application to infrared radiation detection.