The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1988
Filed:
Oct. 27, 1986
Lawrence E Lach, Chicago, IL (US);
Gould Inc., Rolling Meadows, IL (US);
Abstract
A gallium arsenide device converts an ECL voltage signal to a gallium arsenide voltage signal. The device has a pair of depletion transistors for transforming the ECL voltage signal and a predetermined reference voltage into corresponding signal and reference currents to provide pull-up. A pair of enhancement transistors are connected to the pair of depletion transistor for outputting the gallium arsenide voltage signal which is representative of the ECL voltage signal. Positive feedback means for increasing the gain of the pair of enhancement transistors is provided and is connected to the pair of enhancement transistors. The predetermined reference voltage may be derived from a set voltage source or may be derived from a logical one level in the ECL circuit so as to provide temperature tracking for the gallium arsenide circuit. At least a third depletion transistor is connected to a third enhancement transistor. The third enhancement transistor has a gate connected to the output of the pair of depletion transistors. The third depletion and enhancement transistors have a substantially similar structure and topology to the pair of depletion and enhancement transistors.