The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 1988

Filed:

Nov. 07, 1986
Applicant:
Inventor:

Martin R Kasprzyk, Ransomville, NY (US);

Assignee:

Gas Research Institute, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
264 25 ; 264 22 ; 264 60 ;
Abstract

The present invention relates to methods and apparatus for producing tubular articles of silicon carbide and silicon. The articles contain silicon in both metallic and in chemically combined form. The method consists of the steps of concentrically positioning a vertical tubular columns of particulate silicon contiguous to a hollow, vertical tubular columns of particulate silicon carbide, carbon, or mixtures of silicon and carbon, and heating the adjacent columns to a siliciding temperature. The silicon component infiltrates the column containing the particulate silicon carbide, carbon, or mixtures thereof, forming a tubular product. The apparatus consists of supply hoppers for holding the particulate feed material, a loading means comprised of spaced, concentrically arranged, tubular forms. The loading means is positioned within a vertically positioned electrical induction furnace. Particulate feed materials are dry cast in the spaces between and around the forms. The loading means is then removed leaving separate vertical, hollow columns of particulate feed materials concentrically arranged with the furnace. The furnace is then heated from top to bottom to a siliciding temperature. The silicon component infiltrates the column containing silicon carbide, carbon or mixtures thereof to form a dense, tubular silicon-silicon carbide product.


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