The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1988
Filed:
Jun. 20, 1986
Thomas C Hasenberg, Los Angeles, CA (US);
Elsa M Garmire, Manhattan Beach, CA (US);
University of Southern California, Los Angeles, CA (US);
Abstract
A semiconductor laser of the heterostructure type is grown on a p-type substrate and has a plurality of p-type active layers. In a preferred embodiment, the active layers are grown by liquid phase epitaxy from a single melt which is maintained just below its equilibrium temperature and is cooled very slowly during deposition. As a result, the active layers are substantially identical in composition and have a very low lattice mismatch. They emit light at characteristic wavelengths within 50 angstroms of each other, indicating that their modal gain envelopes coincide. This condition minimizes the threshold current.