The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1988
Filed:
Feb. 17, 1987
Yusuke Tajima, Acton, MA (US);
Toshikazu Tsukii, Santa Barbara, CA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A programmable attenuator includes a plurality of field effect transistors (FETS) arranged together to provide an attenuation network. Each one of the FETS has a plurality of cell portions, each cell portion having drain, gate and source regions, the source and drain regions of the cell portions being connected in parallel. A first selected portion of the gate regions of each one of said FETS is connected to a gate electrode. A second selected remaining portion of the gate regions of each one of the FETS has the gate regions thereof physically isolated from the gate electrode. A signal fed to the gate electrode of each FET is distributed to the connected gate regions of each field effect transistor. In response to such signal, the total drain-source resistance of such FET is changed between a predetermined low value and a predetermined high value, with the resistance of the predetermined high value being determined, in part, by the number of such isolated gate regions.