The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1988
Filed:
Jul. 23, 1987
Pierre Jeuch, Seyssins, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
CMOS integrated circuit and process for the production of electric isolation zones in the integrated circuit. According to the invention the process comprises the following stages: formation of several trenches in a silicon substrate, thermal oxidation of the substrate leading to the formation of an oxide film on the sides and bottom of the trenches, elimination of the oxide film near the bottom of the trenches and filling the trenches with a conductive material, thus constituting an electrode connected to the substrate corresponding to the circuit earth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile