The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1988
Filed:
May. 15, 1987
Applicant:
Inventor:
Charles R Hoffman, Raleigh, NC (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
307303 ; 307304 ; 357 14 ; 357 51 ;
Abstract
Described is a capacitive structure that can be fabricated with a digital MOS (Metal Oxide Semiconductor) process. The capacitive structure is comprised of two enhancement mode FET devices electrodes connected in series via their gate electrodes. The source and drain electrodes of each FET device are connected together. A third FET device, biased to operate within the linear or resistive region of its characteristic curve, is connected to the gate electrodes of the enhancement mode FET devices. The structure provides a voltage independent capacitor.