The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1988
Filed:
Aug. 31, 1987
Applicant:
Inventors:
Hang M Liaw, Scottsdale, AZ (US);
Ha T-T. Nguyen, Mesa, AZ (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 89 ; 148D / ; 148D / ; 148D / ; 156613 ; 437112 ; 437970 ; 437 90 ;
Abstract
A method for growing selective epitaxial silicon by chemical vapor deposition resulting in a substantially planar surface by growing superimposed silicon layers at temperatures above and below a transition point.
Liaw, Hang. (1988). Method for improved surface planarity in selective epitaxial silicon (U.S. Patent No. 4786615). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4786615
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile