The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 1988

Filed:

Aug. 24, 1987
Applicant:
Inventors:

E Henry Stevens, Colorado Springs, CO (US);

Paul J McClure, Colorado Springs, CO (US);

Christopher W Hill, Colorado Springs, CO (US);

Assignee:

INMOS Corporation, Colorado Springs, CO (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437190 ; 437192 ; 437239 ; 437242 ; 437161 ; 148D / ; 148D / ; 148D / ;
Abstract

A titanium silicide/titanium nitride process is disclosed wherein the thickness of the titanium nitride can be regulated with respect to the titanium silicide. In particular, a control layer is formed in the contact opening during a reactive cycle to form a relatively thin (20 to 50 angstrom) control layer. Titanium is thereafter deposited and in another thermal reaction the control layer retards the development of titanium silicide without retarding the development of titanium nitride so that the thickness of titanium silicide is kept small. A double titanium process can also be used.


Find Patent Forward Citations

Stevens, E. (1988). Semiconductor contact silicide/nitride process with control for silicide (U.S. Patent No. 4784973). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4784973

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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