The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1988
Filed:
Dec. 19, 1986
John E Cunningham, Eatontown, NJ (US);
Erdmann F Schubert, Hazlet, NJ (US);
Won-Tien Tsang, Holmdel, NJ (US);
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A method of fabricating a field-effect transistor is disclosed wherein only two masking steps are used in the development of the device. The semiconductor wafer used in the process has a non-alloyed contact at its top surface, that is, a contact which does not require alloying temperatures in excess of 200 degrees C. The first mask is used to create conventional mesa structures which isolate each individual field-effect transistor from its adjacent neighbors. A second mask is utilized to define the source and drain electrodes and also to create a gap through which the gate electrode structure is fabricated. By using a single mask for creation of both the source and drain electrodes and the gate structure, very close tolerances are obtained between the gate structure and the source and drain regions.