The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1988
Filed:
Dec. 04, 1986
Applicant:
Inventor:
Katsuhiko Nishida, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ;
Abstract
A semiconductor photodiode comprising an N+ InP substrate 6, a similar InP substrate layer 7, an N- InGaAs layer 8, a thin N-type InP layer 9, an N- InP layer 10 and a P+ InP region 11 forming the top of the photodiode. When reversed biased, the high electric field at the hetero-junction between the N- InGaAs and the N-type InP cause holes to tunnel through the band-gap difference barrier thereby eliminating slow trapping states at the hetero-interface.