The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1988
Filed:
Mar. 04, 1987
Applicant:
Inventors:
Masahiro Hagio, Kyoto, JP;
Shinichi Katsu, Takatsuki, JP;
Kazuhide Gohda, Nagaokakyo, JP;
Shutaro Nambu, Uji, JP;
Hiroshi Tsukada, Takatsuki, JP;
Assignee:
Matsushita Electronics Corporation, Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437039 ; 357 91 ; 437 22 ; 437176 ; 437912 ;
Abstract
In an FET, two first semiconductor regions of higher impurity concentration and smaller thickness, for source electrode and drain electrode, are formed in a second semiconductor region of lower impurity concentration and larger thickness for a gate electrode, thereby obtaining a low source resistance and small leak current.