The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 1988

Filed:

Aug. 27, 1987
Applicant:
Inventors:

Michael G Farrier, Santa Barbara, CA (US);

James M Myrosznyk, Santa Barbara, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-3 ; 437203 ; 437226 ;
Abstract

A method is disclosed for forming a detector device, such as a thinned bulk silicon blocked impurity transducer infrared detector, by thinning a semiconductor substrate (10) and processing the thinned region (30) on two sides to form the detector device. The semiconductor substrate (10) is thinned to form a cavity (26) in the substrate (10). Further processing on both sides of the thinned region (30) is performed while the thinned region is still connected to the thicker substrate. The thinned region (30) is then separated from the substrate (10) upon completion of the given processing steps. The device is then mounted to a readout device (58).


Find Patent Forward Citations

Farrier, Michael. (1988). Process methodology for two-sided fabrication of devices on thinned (U.S. Patent No. 4782028). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4782028

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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