The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1988
Filed:
Sep. 14, 1987
Applicant:
Inventors:
Kaneo Watanabe, Kyoto, JP;
Yukio Nakashima, Osaka, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136249 ; 136258 ; 357 30 ;
Abstract
A photovoltaic device comprises a transparent front electrode, an amorphous semiconductor film containing at least one p-i-n junction and a metallic back electrode, wherein the n-layer neighboring on the back electrode includes at least one first type sub-layer of an alloyed amorphous silicon which contains not only hydrogen and a dopant for n-conductivity type but also at least one element selected from nitrogen, oxygen and carbon, and at least one second type sub-layer of an amorphous silicon which contains hydrogen and a dopant for n conductivity type.