The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 1988

Filed:

Nov. 21, 1985
Applicant:
Inventors:

Donald B Griner, Madison, AL (US);

Frederick W zur Burg, Huntsville, AL (US);

Wayne M Penn, Cartersville, GA (US);

Assignee:

Penn Research Corporation, Kennesaw, GA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
21912165 ; 21912184 ; 2191218 ; 21912162 ; 21912161 ;
Abstract

A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).


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