The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1988
Filed:
Dec. 29, 1986
Applicant:
Inventors:
Kevin L McLaughlin, Chandler, AZ (US);
Walter C Seelbach, Fountain Hills, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365156 ; 365177 ; 365190 ;
Abstract
A BIMOS memory cell is formed by providing a CMOS static RAM cell with an additional NPN bipolar transistor to provide additional drive current during the read cycle to improve the read time of the memory cell.
McLaughlin, Kevin. (1988). Cmos static ram cell provided with an additional bipolar drive transistor (U.S. Patent No. 4779230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4779230
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile