The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1988
Filed:
Jul. 07, 1986
Applicant:
Inventors:
David W Tong, Scotia, NY (US);
John L Benjamin, Liverpool, NY (US);
William R VanDell, North Syracuse, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ;
U.S. Cl.
CPC ...
437228 ; 437233 ;
Abstract
A process for depositing oxygen doped semi-insulating polycrystalline silicon (SIPOS) as a passivation layer over the junction of a semiconductor silicon substrate in which the substrate is subjected to an oxygen removal step immediately prior to the creation of the SIPOS layer to thereby prevent the creation of an oxide layer at the interface between the SIPOS and the substrate.