The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1988
Filed:
Feb. 02, 1987
Applicant:
Inventors:
Volker Doormann, Hamburg, DE;
Jens-Peter Krumme, Hamburg, DE;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041922 ; 156628 ; 20419215 ; 2041923 ; 20419235 ;
Abstract
A method of manufacturing structured epitaxial layers is discribed having monocrystalline layer regions adjacent to layer regions of a different order situated on a monocrystalline substrate whose crystal lattice is disturbed in locally bounded surface regions. A lattice disorder is formed with, the layers being manufactured by means of RF cathode sputtering (sputter epitaxy) in an inert gas plasma, and making use of a target containing the elements which contribute in the form of phases with an almost identical sputtering rate to the formation of the layer.