The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1988
Filed:
Oct. 05, 1987
Harold G Parks, Scotia, NY (US);
William W Piper, Scotia, NY (US);
George E Possin, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A process for the fabrication of thin film field effect transistors in active matrix liquid crystal display devices includes the utilization of a protective, conductive tab disposed on a corner portion of the pixel electrodes. Electrical contact is made to the pixel electrodes not directly, but rather through a via opening in protective, insulative and amorphous silicon layers. The structure is particularly advantageous in that it permits the utilization of a wider range of gate and upper level metallization materials, particularly aluminum, whose etchants are otherwise found deleterious to pixel electrode material such as indium tin oxide. The structure of the present invention is seen to be readily fabricatable in accordance with high yield fabrication procedures.