The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1988
Filed:
Nov. 26, 1985
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 60 ; 357 26 ;
Abstract
An IC device comprising a plurality of FET's using a compound semiconductor, more specifically, a zincblende type semiconductor substrate, having a surface of a (111) plane. By use of this plane, differences of characteristics of the FET's depending on directions along which gates of the FET's are arranged when the gate length is made shorter are prevented, allowing arrangement of gates of the FET's in different directions, particularly perpendicular to each other, with making the gate length shorter to miniaturize and densify the device.