The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1988
Filed:
May. 28, 1986
Applicant:
Inventors:
Adriano Mattera, Novara, IT;
Roberto Fornari, Parma, IT;
Renato Magnanini, Reggio Emilia, IT;
Carlo Paorici, Parma, IT;
Lucio Zanotti, Parma, IT;
Giovanni Zuccalli, Parma, IT;
Assignees:
Montedison S.p.A., Milan, IT;
Consiglio Nazionale Delle Ricerche, Rome, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; C30B / ;
U.S. Cl.
CPC ...
252 / ; 1566202 ; 156607 ; 156605 ; 156D / ;
Abstract
Undoped GaAs single crystals with low dislocation density, low impurity content, 0.20-1 Kg in weight and constant diameter of 1'-2' (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal in situ and subsequent growth of the single crystal.
Mattera, Adriano. (1988). Gallium arsenide single crystals with low dislocation density and high (U.S. Patent No. 4776971). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4776971
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile