The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1988
Filed:
Aug. 21, 1986
Shigeyasu Kouzuchi, Ibaraki, JP;
Shuroku Sakurada, Katsuta, JP;
Tadashi Sakaue, Hitachi, JP;
Masafumi Ono, Hitachi, JP;
Hitachi Ltd., Tokyo, JP;
Hitachi Haramachi Semi-Conductor Ltd., Tokyo, JP;
Abstract
A pressure contact semiconductor device has a semiconductor substrate disposed on a metal post electrode through metal electrode plate, an insulating ring engaged with the periphery of the metal post electrode extends to the periphery of the metal electrode plate and is brought into contact therewith at a certain height with a sufficient contact pressure. The semiconductor substrate is positioned precisely with respect to the metal post electrode so that a gate electrode ring is precisely positioned on a gate electrode film formed on the upper surface of the semiconductor substrate.