The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1988
Filed:
Dec. 18, 1987
Applicant:
Inventor:
Susumu Yoshida, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-5 ; 136262 ; 148D / ; 437119 ; 437133 ;
Abstract
After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution is terminated, a substrate is temporarily dipped in an undoped GaAs saturated or supersaturated solution, and thereafter liquid-phase epitaxial growth is performed by a p-type Al.sub.x Ga.sub.1-x As saturated solution. Thus, the n-type GaAs saturated solution is prevented from being mixed into the p-type Al.sub.x Ga.sub.1-x As saturated solution to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.