The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1988
Filed:
Nov. 26, 1986
Tadashi Fukuzawa, Tokyo, JP;
Ken Yamaguchi, Tokyo, JP;
Susumu Takahashi, Tokyo, JP;
Hisao Nakashima, Tokyo, JP;
Michiharu Nakamura, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The semiconductor device of this invention consists at least of a laminate of a semi-insulating or p-type first semiconductor layer having a forbidden band width E.sub.g1, an undoped or p.sup.- -type second semiconductor layer having a forbidden band width E.sub.g2 and an n-type third semiconductor layer having forbidden band width E.sub.g3. The laminate is deposited on a predetermined semiconductor substrate and the forbidden band width has the relation E.sub.g2 <E.sub.g1, E.sub.g3. A pair of electrodes are so formed as to come into contact at least with the interface between the second and third semiconductor layers, and a control electrode, which forms a Schottky junction with the third semiconductor layer, is formed at a predetermined position interposed between the pair of electrodes. The semiconductor device has excellent pinch-off characteristic.